Position
on the date of
his appointment to the Strategic Advisory Board on Information Technologies,
27 September 2004
Born in Honfleur (France) in 1945, Joël
Monnier graduated in 1968 from ENSERG, the electronics and IT college of Institut
National Polytechnique in Grenobles.
Joël Monnier
started out as a researcher for CEN-Grenoble and obtained a doctorate at LETI,
the IT electronics laboratory.
In 1974 he joined Texas Instruments' R&D
laboratory in Villeneuve-Loubet (France). He was subsequently appointed Vice President
MOS, Memory and Logic Technologies Development in Houston (USA). On his return
in France, he became Vice President Engineering and Production Operations at Texas
Instruments France.
Mr Monnier moved to Thomson-CSF in
1983 where he headed the Research and Manufacturing department of EFCIS, a subsidiary
which was subsequently merged with Thomson Semiconducteurs. After the merger between
Thomson Semiconducteurs and SGS Microelettronica in July 1987, he was appointed
Corporate Vice President Manufacturing. In 1989 he became Vice President Central
R&D with responsibility for VLSI technology and design automation (with teams
in Agrate/Milan, Crolles/Grenobles, Carrollton/Dallas, Berkeley, San Diego and
New Delhi).
Joël Monnier has helped to boost the technological
competitiveness of STMicroelectronics, guaranteeing the group's strategic and
technological independence. He has made key contributions to its R&D agreements
with Philips and subsequently TSMC et Motorola in Crolles, and with Dai Nippon
Printing in Agrate.
He has strengthened the group's involvement
in such European high-tech projects as IST and MEDEA+, such international projects
as Sematech and several important French programmes.
He
also chairs the Comité des Engagements d'Amorçages Rhône-Alpes,
a seed capital initiative in the Rhône-Alpes region to promote the creation
of new businesses.
In 2003 he received the European SEMI
Award in recognition of his contribution to cooperation and integration in the
European semiconductor industry and its overall development.
